Scattering mechanisms and electronic behavior in transparent conducting ZnxIn2Ox+3 indium-zinc oxide thin films
Identifieur interne : 00E366 ( Main/Repository ); précédent : 00E365; suivant : 00E367Scattering mechanisms and electronic behavior in transparent conducting ZnxIn2Ox+3 indium-zinc oxide thin films
Auteurs : RBID : Pascal:02-0179449Descripteurs français
- Pascal (Inist)
- 7866L, 7220M, 6855A, 7280J, 7361L, 7830H, 7840F, 8115F, 7220E, 6320K, 7138, Etude expérimentale, Zinc composé, Indium composé, Semiconducteur bande interdite large, Couche mince semiconductrice, Transmission lumière, Dépôt laser pulsé, Croissance semiconducteur, Résistivité électrique, Mobilité Hall, Densité électron, Diffusion impureté, Interaction électron phonon, Spectre visible, Spectre IR, Masse effective.
English descriptors
- KwdEn :
- Effective mass, Electric resistivity, Electron density, Electron-phonon interactions, Experimental study, Hall mobility, Impurity scattering, Indium compounds, Infrared spectra, Light transmission, Pulsed laser deposition, Semiconductor growth, Semiconductor thin films, Visible spectra, Wide band gap semiconductors, Zinc compounds.
Abstract
Thin films of ZnxIn2Ox+3 (x=2, 3, 4, 5, 7, 9, 11, 13, and 15) were grown by pulsed laser deposition and their electronic properties characterized. Through resistivity, Hall mobility and carrier concentration measurements as a function of temperature, we found that whatever the composition, these films behave as n-type degenerate semiconductors exhibiting a metal-like behavior. Transport properties are driven by two types of electronic scattering, namely ionized impurities (oxygen vacancies) at low temperature and optical phonons at high temperature. Modeling of optical transmittance spectra in the visible-infrared region yields two different trends among the different compositions: for (x=2, 3, 4, 5, 7, and 9) values the electronic behavior can be described by applying the single Drude model on a plasma of nearly free carriers, whereas for zinc-rich (x=11, 13, and 15) compounds a supplementary Lorentz oscillator is necessary to simulate the spectroscopic data, revealing the presence of bound optically active electrons. Good agreement is found in every case between the experimental Hall mobility and the optical mobility calculated from relaxation time and effective mass fitted parameters. We show that the mobility drop can be explained primarily by a drastic increase in the effective mass for the highest x values. © 2002 American Institute of Physics.
Links toward previous steps (curation, corpus...)
- to stream Main, to step Corpus: 00F898
Links to Exploration step
Pascal:02-0179449Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Scattering mechanisms and electronic behavior in transparent conducting Zn<sub>x</sub>In<sub>2</sub>O<sub>x+3</sub> indium-zinc oxide thin films</title><author><name sortKey="Marcel, C" uniqKey="Marcel C">C. Marcel</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Laboratoire de Reactivite et de Chimie des Solides, Universite de Picardie Jules Verne, UMR 6007, 80039 Amiens Cedex, France</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">France</country><wicri:regionArea>Laboratoire de Reactivite et de Chimie des Solides, Universite de Picardie Jules Verne, UMR 6007, 80039 Amiens Cedex</wicri:regionArea><placeName><region type="region" nuts="2">Picardie</region><settlement type="city">Amiens</settlement></placeName></affiliation><affiliation wicri:level="3"><inist:fA14 i1="03"><s1>Laboratoire de Reactivite et de Chimie des Solides, Universite de Picardie Jules Verne, UMR 6007, 80039 Amiens Cedex, France</s1></inist:fA14><country xml:lang="fr">France</country><wicri:regionArea>Laboratoire de Reactivite et de Chimie des Solides, Universite de Picardie Jules Verne, UMR 6007, 80039 Amiens Cedex</wicri:regionArea><placeName><region type="region" nuts="2">Picardie</region><settlement type="city">Amiens</settlement></placeName></affiliation></author><author><name sortKey="Naghavi, N" uniqKey="Naghavi N">N. Naghavi</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Laboratoire de Reactivite et de Chimie des Solides, Universite de Picardie Jules Verne, UMR 6007, 80039 Amiens Cedex, France</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">France</country><wicri:regionArea>Laboratoire de Reactivite et de Chimie des Solides, Universite de Picardie Jules Verne, UMR 6007, 80039 Amiens Cedex</wicri:regionArea><placeName><region type="region" nuts="2">Picardie</region><settlement type="city">Amiens</settlement></placeName></affiliation></author><author><name sortKey="Couturier, G" uniqKey="Couturier G">G. Couturier</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Centre de Physique Moleculaire Optique et Hertzienne, Universite de Bordeaux I, 351 Cours de la Liberation, 33405 Talence Cedex, France</s1><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">France</country><wicri:regionArea>Centre de Physique Moleculaire Optique et Hertzienne, Universite de Bordeaux I, 351 Cours de la Liberation, 33405 Talence Cedex</wicri:regionArea><placeName><region type="region" nuts="2">Aquitaine</region><settlement type="city">Talence</settlement></placeName></affiliation></author><author><name sortKey="Salardenne, J" uniqKey="Salardenne J">J. Salardenne</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Centre de Physique Moleculaire Optique et Hertzienne, Universite de Bordeaux I, 351 Cours de la Liberation, 33405 Talence Cedex, France</s1><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">France</country><wicri:regionArea>Centre de Physique Moleculaire Optique et Hertzienne, Universite de Bordeaux I, 351 Cours de la Liberation, 33405 Talence Cedex</wicri:regionArea><placeName><region type="region" nuts="2">Aquitaine</region><settlement type="city">Talence</settlement></placeName></affiliation></author><author><name sortKey="Tarascon, J M" uniqKey="Tarascon J">J. M. Tarascon</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Laboratoire de Reactivite et de Chimie des Solides, Universite de Picardie Jules Verne, UMR 6007, 80039 Amiens Cedex, France</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">France</country><wicri:regionArea>Laboratoire de Reactivite et de Chimie des Solides, Universite de Picardie Jules Verne, UMR 6007, 80039 Amiens Cedex</wicri:regionArea><placeName><region type="region" nuts="2">Picardie</region><settlement type="city">Amiens</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">02-0179449</idno><date when="2002-04-01">2002-04-01</date><idno type="stanalyst">PASCAL 02-0179449 AIP</idno><idno type="RBID">Pascal:02-0179449</idno><idno type="wicri:Area/Main/Corpus">00F898</idno><idno type="wicri:Area/Main/Repository">00E366</idno></publicationStmt><seriesStmt><idno type="ISSN">0021-8979</idno><title level="j" type="abbreviated">J. appl. phys.</title><title level="j" type="main">Journal of applied physics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Effective mass</term><term>Electric resistivity</term><term>Electron density</term><term>Electron-phonon interactions</term><term>Experimental study</term><term>Hall mobility</term><term>Impurity scattering</term><term>Indium compounds</term><term>Infrared spectra</term><term>Light transmission</term><term>Pulsed laser deposition</term><term>Semiconductor growth</term><term>Semiconductor thin films</term><term>Visible spectra</term><term>Wide band gap semiconductors</term><term>Zinc compounds</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7866L</term><term>7220M</term><term>6855A</term><term>7280J</term><term>7361L</term><term>7830H</term><term>7840F</term><term>8115F</term><term>7220E</term><term>6320K</term><term>7138</term><term>Etude expérimentale</term><term>Zinc composé</term><term>Indium composé</term><term>Semiconducteur bande interdite large</term><term>Couche mince semiconductrice</term><term>Transmission lumière</term><term>Dépôt laser pulsé</term><term>Croissance semiconducteur</term><term>Résistivité électrique</term><term>Mobilité Hall</term><term>Densité électron</term><term>Diffusion impureté</term><term>Interaction électron phonon</term><term>Spectre visible</term><term>Spectre IR</term><term>Masse effective</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Thin films of Zn<sub>x</sub>In<sub>2</sub>O<sub>x+3</sub> (x=2, 3, 4, 5, 7, 9, 11, 13, and 15) were grown by pulsed laser deposition and their electronic properties characterized. Through resistivity, Hall mobility and carrier concentration measurements as a function of temperature, we found that whatever the composition, these films behave as n-type degenerate semiconductors exhibiting a metal-like behavior. Transport properties are driven by two types of electronic scattering, namely ionized impurities (oxygen vacancies) at low temperature and optical phonons at high temperature. Modeling of optical transmittance spectra in the visible-infrared region yields two different trends among the different compositions: for (x=2, 3, 4, 5, 7, and 9) values the electronic behavior can be described by applying the single Drude model on a plasma of nearly free carriers, whereas for zinc-rich (x=11, 13, and 15) compounds a supplementary Lorentz oscillator is necessary to simulate the spectroscopic data, revealing the presence of bound optically active electrons. Good agreement is found in every case between the experimental Hall mobility and the optical mobility calculated from relaxation time and effective mass fitted parameters. We show that the mobility drop can be explained primarily by a drastic increase in the effective mass for the highest x values. © 2002 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0021-8979</s0></fA01><fA02 i1="01"><s0>JAPIAU</s0></fA02><fA03 i2="1"><s0>J. appl. phys.</s0></fA03><fA05><s2>91</s2></fA05><fA06><s2>7</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Scattering mechanisms and electronic behavior in transparent conducting Zn<sub>x</sub>In<sub>2</sub>O<sub>x+3</sub> indium-zinc oxide thin films</s1></fA08><fA11 i1="01" i2="1"><s1>MARCEL (C.)</s1></fA11><fA11 i1="02" i2="1"><s1>NAGHAVI (N.)</s1></fA11><fA11 i1="03" i2="1"><s1>COUTURIER (G.)</s1></fA11><fA11 i1="04" i2="1"><s1>SALARDENNE (J.)</s1></fA11><fA11 i1="05" i2="1"><s1>TARASCON (J. M.)</s1></fA11><fA14 i1="01"><s1>Laboratoire de Reactivite et de Chimie des Solides, Universite de Picardie Jules Verne, UMR 6007, 80039 Amiens Cedex, France</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ></fA14><fA14 i1="02"><s1>Centre de Physique Moleculaire Optique et Hertzienne, Universite de Bordeaux I, 351 Cours de la Liberation, 33405 Talence Cedex, France</s1><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="03"><s1>Laboratoire de Reactivite et de Chimie des Solides, Universite de Picardie Jules Verne, UMR 6007, 80039 Amiens Cedex, France</s1></fA14><fA20><s1>4291-4297</s1></fA20><fA21><s1>2002-04-01</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>126</s2></fA43><fA44><s0>8100</s0><s1>© 2002 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>02-0179449</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of applied physics</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>Thin films of Zn<sub>x</sub>In<sub>2</sub>O<sub>x+3</sub> (x=2, 3, 4, 5, 7, 9, 11, 13, and 15) were grown by pulsed laser deposition and their electronic properties characterized. Through resistivity, Hall mobility and carrier concentration measurements as a function of temperature, we found that whatever the composition, these films behave as n-type degenerate semiconductors exhibiting a metal-like behavior. Transport properties are driven by two types of electronic scattering, namely ionized impurities (oxygen vacancies) at low temperature and optical phonons at high temperature. Modeling of optical transmittance spectra in the visible-infrared region yields two different trends among the different compositions: for (x=2, 3, 4, 5, 7, and 9) values the electronic behavior can be described by applying the single Drude model on a plasma of nearly free carriers, whereas for zinc-rich (x=11, 13, and 15) compounds a supplementary Lorentz oscillator is necessary to simulate the spectroscopic data, revealing the presence of bound optically active electrons. Good agreement is found in every case between the experimental Hall mobility and the optical mobility calculated from relaxation time and effective mass fitted parameters. We show that the mobility drop can be explained primarily by a drastic increase in the effective mass for the highest x values. © 2002 American Institute of Physics.</s0></fC01><fC02 i1="01" i2="3"><s0>001B70H66L</s0></fC02><fC02 i1="02" i2="3"><s0>001B70B20M</s0></fC02><fC02 i1="03" i2="3"><s0>001B80A15A</s0></fC02><fC02 i1="04" i2="3"><s0>001B70B80J</s0></fC02><fC02 i1="05" i2="3"><s0>001B70C61L</s0></fC02><fC02 i1="06" i2="3"><s0>001B70H30H</s0></fC02><fC02 i1="07" i2="3"><s0>001B70H40F</s0></fC02><fC02 i1="08" i2="3"><s0>001B80A15F</s0></fC02><fC02 i1="09" i2="3"><s0>001B70B20E</s0></fC02><fC02 i1="10" i2="3"><s0>001B60C20K</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>7866L</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="02" i2="3" l="FRE"><s0>7220M</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>6855A</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="04" i2="3" l="FRE"><s0>7280J</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="05" i2="3" l="FRE"><s0>7361L</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="06" i2="3" l="FRE"><s0>7830H</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="07" i2="3" l="FRE"><s0>7840F</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="08" i2="3" l="FRE"><s0>8115F</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="09" i2="3" l="FRE"><s0>7220E</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="10" i2="3" l="FRE"><s0>6320K</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="11" i2="3" l="FRE"><s0>7138</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Zinc composé</s0></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Zinc compounds</s0></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Indium composé</s0></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Indium compounds</s0></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Semiconducteur bande interdite large</s0></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Wide band gap semiconductors</s0></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Couche mince semiconductrice</s0></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Semiconductor thin films</s0></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Transmission lumière</s0></fC03><fC03 i1="17" i2="3" l="ENG"><s0>Light transmission</s0></fC03><fC03 i1="18" i2="3" l="FRE"><s0>Dépôt laser pulsé</s0></fC03><fC03 i1="18" i2="3" l="ENG"><s0>Pulsed laser deposition</s0></fC03><fC03 i1="19" i2="3" l="FRE"><s0>Croissance semiconducteur</s0></fC03><fC03 i1="19" i2="3" l="ENG"><s0>Semiconductor growth</s0></fC03><fC03 i1="20" i2="3" l="FRE"><s0>Résistivité électrique</s0></fC03><fC03 i1="20" i2="3" l="ENG"><s0>Electric resistivity</s0></fC03><fC03 i1="21" i2="3" l="FRE"><s0>Mobilité Hall</s0></fC03><fC03 i1="21" i2="3" l="ENG"><s0>Hall mobility</s0></fC03><fC03 i1="22" i2="3" l="FRE"><s0>Densité électron</s0></fC03><fC03 i1="22" i2="3" l="ENG"><s0>Electron density</s0></fC03><fC03 i1="23" i2="3" l="FRE"><s0>Diffusion impureté</s0></fC03><fC03 i1="23" i2="3" l="ENG"><s0>Impurity scattering</s0></fC03><fC03 i1="24" i2="3" l="FRE"><s0>Interaction électron phonon</s0></fC03><fC03 i1="24" i2="3" l="ENG"><s0>Electron-phonon interactions</s0></fC03><fC03 i1="25" i2="3" l="FRE"><s0>Spectre visible</s0></fC03><fC03 i1="25" i2="3" l="ENG"><s0>Visible spectra</s0></fC03><fC03 i1="26" i2="3" l="FRE"><s0>Spectre IR</s0></fC03><fC03 i1="26" i2="3" l="ENG"><s0>Infrared spectra</s0></fC03><fC03 i1="27" i2="3" l="FRE"><s0>Masse effective</s0></fC03><fC03 i1="27" i2="3" l="ENG"><s0>Effective mass</s0></fC03><fN21><s1>098</s1></fN21><fN47 i1="01" i2="1"><s0>0214M000263</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
EXPLOR_STEP=IndiumV3/Data/Main/Repository
HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 00E366 | SxmlIndent | more
Ou
HfdSelect -h $EXPLOR_AREA/Data/Main/Repository/biblio.hfd -nk 00E366 | SxmlIndent | more
Pour mettre un lien sur cette page dans le réseau Wicri
{{Explor lien
|wiki= *** parameter Area/wikiCode missing ***
|area= IndiumV3
|flux= Main
|étape= Repository
|type= RBID
|clé= Pascal:02-0179449
|texte= Scattering mechanisms and electronic behavior in transparent conducting ZnxIn2Ox+3 indium-zinc oxide thin films
}}
| This area was generated with Dilib version V0.5.77. |  |